FFM102L 查看數據表（PDF） - Willas Electronic Corp.
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比赛名单
FFM102L Datasheet PDF : 4 Pages
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WILLAS
1.01.A0ASSUUFRRFAACCEE MMOOUUNNTTSCFHAOSTTTRKYECBAORVREIERRYRREECCTITFIIFEIRESR-S20-5V0- -210000V0V
SOD-S12M3A+-LPSAPCKAACGKEAGE
FFFMM1T10H21R0LU-M+
FFFPMTMbHF11rR0e2eU70PL0ro-dMuc+t
P aFcekaitnugr ei ns f o r m a t i o n
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
P0
• Low power loss, high efficiency.
P1
• High current capability, low forward voltage drop.
d
• High surge capability.
• Guardring for overvoltage protection.
E
• Ultra high-speed switching.
• SFilicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
B
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-AV0 rated flame retardant
P
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
W
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings aTt 25℃ ambient temperature unless otherwise specified.
D2
D1
Single phase half wave, 60Hz, resistive of inductive load.
C
For capacitive load, derate current by 20%
RATINGS
W1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FMD160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS
14
21
VDC
20
30
28
35
40
50
42
56
70
unit:mm
60
80
100
105
140 Volts
150
200 Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
Item
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2) Carrier width RΘJA
Typical Junction Capacitance (Note 1) Carrier length
CJ
Operating Temperature Range
Carrier depth
TJ
Storage Temperature Range
Sprocket hole
TSTG
13" Reel outside diameter
Symbol Tolerance
A
0.1
B
0.1
-5C5 to +125 0.1
d
0.1
D
2.0
SMA
30
420.80
1520.00
1.90
- 65 t1o.5+0175
330.00
-55 to +150
Amps
℃/W
PF
℃
℃
13" Reel inner diameter
D1
min
50.00
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
7" Reel outside diameter
D
2.0
178.00
Maximum Forward Voltage at 1.0A DC7" Reel inner diameVtFer
D1 0.50 min
0.70 62.00
0.85
0.9
0.92 Volts
Maximum Average Reverse Current atFe@edT Ah=o2le5℃diameterIR
D2
0.5
103.5.00
mAmps
Rated DC Blocking Voltage
Sp@roTcAk=e1t2h5o℃le position
E
0.1
110.75
Punch hole position
NOTES:
Punch hole pitch
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Sprocket hole pitch
2- Thermal Resistance From Junction to AEmmbibeontssment center
F
0.1
P
0.1
P0
0.1
P1
0.1
5.50
4.00
4.00
2.00
Overall tape thickness
T
0.1
0.23
Tape width
W
0.3
12.00
Reel width
W1
1.0
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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