FQP3N90 查看數據表（PDF） - Fairchild Semiconductor
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FQP3N90 Datasheet PDF : 8 Pages
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Typical Characteristics
101
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100 Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
8
7
VGS = 10V
6
VGS = 20V
5
4
3
※ Note : TJ = 25℃
2
0
2
4
6
8
10
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss
gd
Ciss
600
Coss
※ Notes :
400
1. V = 0 V
GS
2. f = 1 MHz
Crss
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
VDS = 180V
10
VDS = 450V
8
VDS = 720V
6
4
2
※ Note : ID = 3.6 A
0
0
3
6
9
12
15
18
21
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000
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