FZ1200R33KL2 查看數據表（PDF） - eupec GmbH
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FZ1200R33KL2 Datasheet PDF : 9 Pages
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
VGE = ±15V, RG = 2,7W, CGE = 330nF,Tvj = 125°C
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
VGE = ±15V, RG = 2,7W, CGE = 330nF,Tvj = 125°C
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
VGE = ±15V, RG = 2,7W, CGE = 330nF,Tvj = 125°C
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
VGE = ±15V, RG = 2,7W, CGE = 330nF,Tvj = 125°C
IC = 1200 A, VCC = 1800V, VGE = 15V
RG = 1,2W, CGE = 330nF, Tvj = 125°C, LS = 40nH
IC = 1200 A, VCC = 1800V, VGE = 15V
RG = 2,7W, CGE = 330nF, Tvj = 125°C, LS = 40nH
tP £ 10µsec, VGE £ 15V
TVj£125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
T = 25°C
vorläufiges Datenblatt
preliminary datasheet
min. typ. max.
td,on
-
700
ns
-
700
ns
tr
-
450
ns
-
450
ns
td,off
-
2500
-
ns
-
2700
-
ns
tf
-
220
-
ns
-
330
-
ns
Eon
-
2700
-
mWs
Eoff
-
1590
-
mWs
ISC
-
5200
-
A
LsCE
-
10
-
nH
RCC'+EE'
-
0,12
-
mW
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 1200 A, VGE = 0V, Tvj = 25°C
IF = 1200 A, VGE = 0V, Tvj = 125°C
IF = 1200 A, - diF/dt = 4900 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
IF = 1200 A, - diF/dt = 4900 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
IF = 1200 A, - diF/dt = 4900 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
min. typ. max.
VF
-
2,60 3,35
V
-
2,45 3,30
V
IRM
-
1180
-
A
-
1300
-
A
Qr
-
650
-
µAs
-
1200
-
µAs
Erec
-
430
-
mWs
-
1150
-
mWs
2 (9)
FZ1200R33KL2_V Rev3.xls
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