GA100TS120U 查看數據表（PDF） - International Rectifier

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GA100TS120U

"HALF-BRIDGE" IGBT INT-A-PAK

International Rectifier 

GA100TS120U

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 —

VCE(on)

Collector-to-Emitter Voltage

— 2.4

— 2.2

VGE(th)

Gate Threshold Voltage

3.0 —

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11

gfe

Forward Transconductance ➃

— 136

ICES

Collector-to-Emitter Leaking Current

——

——

VFM

Diode Forward Voltage - Maximum

— 3.3

— 3.2

IGES

Gate-to-Emitter Leakage Current

——

—

VGE = 0V, IC = 1mA

2.9

VGE = 15V, IC = 100A

— V VGE = 15V, IC = 100A, TJ = 125°C

6.0

IC = 1.25mA

— mV/°C VCE = VGE, IC = 1.25mA

— S VCE = 25V, IC = 100A

1.0 mA VGE = 0V, VCE = 1200V

10

VGE = 0V, VCE = 1200V, TJ = 125°C

4.0 V IF = 100A, VGE = 0V

—

IF = 100A, VGE = 0V, TJ = 125°C

250 nA VGE = ±20V

Dynamic Characteristics - TJ = 125°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff (1)

Ets (1)

Cies

Coes

Cres

trr

Irr

Qrr

di(rec)M/dt

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Energy

Turn-Off Switching Energy

Total Switching Energy

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak ReverseCurrent

Diode Recovery Charge

Diode Peak Rate of Fall of Recovery

During tb

— 830 1245

VCC = 400V

— 140 210 nC IC = 124A

— 275 412

TJ = 25°C

— 172 —

RG1 = 15Ω, RG2 = 0Ω,

— 141 — ns IC = 100A

— 435 —

VCC = 720V

— 343 —

VGE = ±15V

— 14 — mJ

— 21 —

— 35 52

— 18672 —

VGE = 0V

— 830 — pF VCC = 30V

— 161 —

ƒ = 1 MHz

— 149 — ns IC = 100A

— 104 — A RG1 = 15Ω

— 7664 — µC RG2 = 0Ω

— 1916 — A/µs VCC = 720V

di/dt»1300A/µs

2

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