T224162B 查看數據表（PDF） - Taiwan Memory Technology
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T224162B Datasheet PDF : 14 Pages
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tm TE
CH
T224162B
AC CHARACTERISTICS SYM -22
-2 5
-2 8
-3 5
-4 5
-5 0
UNIT Notes
PARAMETER
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
Column Address to WE
Delay Time
tAWD 21
21
24
31
35
43
ns 11
CAS to WE Delay Time tCWD 17
17
18
25
27
33
ns 11,18
Transition Time (rise or fall) tT
1.5 50 1.5 50 1.5 50 2.5 50 2.5 50 2.5 50 ns 2,3
Refresh Period (512 cycles) tREF
8
8
8
8
8
8 ms
RAS to CAS Precharge
Time
tRPC
10
10
10
10
10
10
ns
CAS Setup Time (CBR
REFRESH)
tCSR
5
5
5
10
10
10
ns 1,18
CAS Hold Time (CBR
REFRESH)
tCHR 7
7
7
10
10
10
ns 1,19
OE Hold Time From WE
During Read-Modify-Write tOEH 4
4
4
4
6
8
ns 16
Cycle
OE Low to CAS High
Setup Time
tOES
4
4
4
4
5
5
ns
OE High Hold Time From
CAS High
tOEHC 2
2
2
2
2
2
ns
OE High Pulse Width
tOEP 2
2
2
2
2
2
ns
OE Setup Prior to CAS
During Hidden Refresh tORD 0
0
0
0
0
0
ns
Cycle
Last CAS Going Low to
First CAS Returning High tCLCH 4
4
4
4
6
8
ns 21
Data Output Hold After CAS
Returning Low
tCOH
3
3
3
3
4
5
ns
Output Disable Delay From
WE
tWHZ 3 6 3 7 3 7 3 7 3 7 3 9 ns
Taiwan Memory Technology, Inc. reserves the right P. 6
to change products or specifications without notice.
Publication Date:AUG. 2000
Revision:L
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