HA1127P 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

HA1127P

5 Transistor Arrays

Hitachi -> Renesas Electronics 

HA1127, HA1127P, HA1127FP

Electrical Characteristics (Ta = 25°C)

Item

Collector-base

breakdown voltage

Collector-e m itter

breakdown voltage

Collector-substrate

breakdown voltage

Emitter-base

breakdown voltage

Collector cutoff

current

Collector-emitter

saturation voltage

Base-emitter

voltage

DC current

amplification ratio

Gain-bandwidth

product

Collector output

capacitance

Emitter input

capacitance

Switching time

Symbol

V(BR)CBO

V(BR)CEO

V(BR)CIO

V(BR)EBO

ICBO

ICEO

VCE(sat)

VBE

hFE

fT

Cob

Cin

ton

toff

tstg

Min Typ Max Unit Test Condition

20 — — V

IC = 10 µA, IE = 0

15 — — V

IC = 1 mA, RBE =

20 — — V

IC = 10 µA, IE = 0, IB = 0

5

——V

IE = 10 µA, IC = 0

— 0.002 40 nA VCB = 10 V, IE = 0

—

—

0.5 µA

VCE = 10 V, RBE =

— 0.17 — V

IC = 10 mA, IB = 1 mA

— 0.72 — V

— 0.80 — V

VCE = 3 V

40 140 —

— 120 —

VEE = 3 V

— 460 — MHz VCE = 3 V, IC = 3 mA

IC = 1 mA

IC = 10 mA

IC = 1 mA

IC = 10 mA

— 1.7 — pF VCB = 3 V, IE = 0, f = 1 MHz

— 2.0 — pF VCB = 3 V, IE = 0, f = 1 MHz

—

35 —

ns

VCC = 10 V, IC = 10IB1 = –10IB2 = 10 mA

— 130 — ns

— 75 — ns

505

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