HA-5101/883 查看數據表（PDF） - Intersil
零件编号
产品描述 (功能)
比赛名单
HA-5101/883 Datasheet PDF : 16 Pages
| |||
HA-5101/883
Die Characteristics
DIE DIMENSIONS
70 X 70 X 19 mils ±1mil
1790 x 1780 x 483µm ±25.4µm
METALLIZATION
Type: AI, 1% Cu
Thickness: 16kÅ ±2kÅ
GLASSIVATION
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
WORST CASE CURRENT DENSITY:
1.38 x 105A/cm2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 54
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
BAL
HA-5101/883
NC
-IN
V+
+IN
OUT
V-
BAL
8
FN3931.1
August 17, 2005
Share Link: 