HC1417 查看數據表（PDF） - Shantou Huashan Electronic Devices
零件编号
产品描述 (功能)
比赛名单
HC1417 Datasheet PDF : 1 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC1417
█ APPLICATIONS
High Frequency Amplifier Application.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………20V
VCEO——Collector-Emitter Voltage……………………………15V
VEBO ——Emitter -Base Voltage………………………………3V
IC——Collector Current……………………………………30mA
TO-92
1―Emitter ， E
2―Collector，C
3―Base， B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
fT Current Gain-Bandwidth Product
Cob Output Capacitance
NF Noise Figure
２０
１５
３
５４
１００
３００
１．４
５．５
０．１
０．１
１４６
０．５
１．４２
Ｖ ＩＣ＝１００μＡ，ＩＥ＝０
Ｖ ＩＣ＝１ｍＡ，ＩＢ＝０
Ｖ ＩＥ＝１００μＡ，ＩＣ＝０
μＡ ＶＣＢ＝１０Ｖ， ＩＥ＝０
μＡ ＶＥＢ＝３Ｖ， ＩＣ＝０
ＶＣＥ＝６Ｖ， ＩＣ＝１ｍＡ
Ｖ ＩＣ＝１０ｍＡ， ＩＢ＝１ｍＡ
Ｖ ＩＣ＝１０ｍＡ， ＩＢ＝１ｍＡ
ＭＨｚ ＶＣＥ＝１０Ｖ， ＩＣ＝５０ｍＡ
ｐＦ ＶＣＢ＝１０Ｖ，ＩＥ＝０，ｆ＝１ＭＨｚ
ｄＢ ＶＣＥ＝６Ｖ，ＩＣ＝１ｍＡ，ＲＧ＝５０O
█ hFE Classification
F
G
H
５４—８０
７２－－１０８
９７－－１４６
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