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HD74HC1G86CME 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
比赛名单
HD74HC1G86CME
Renesas
Renesas Electronics Renesas
HD74HC1G86CME Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HD74HC1G86
Switching Characteristics
Ta = 25°C
Item
Symbol Min
Typ
Output rise / fall time tTLH
4
tTHL
Propagation delay time tPLH
10
tPHL
(CL = 15 pF, tr = tf = 6 ns, VCC = 5 V)
Max
Unit Test Conditions
8
ns
Test circuit
17
ns
Test circuit
Item
VCC Ta = 25°C
Ta = –40 to 85°C
Symbol (V) Min Typ Max Min Max Unit Test Conditions
Output rise / fall time tTLH
tTHL
2.0 — 50 125 —
4.5 — 14 25 —
155 ns Test circuit
31
6.0 — 12 21 —
26
Propagation delay time tPLH
tPHL
2.0 — 48 100 —
4.5 — 12 20 —
125 ns Test circuit
25
6.0 — 9 17 —
21
Input capacitance
CIN
— — 2.5 5 —
5
pF
Equivalent capacitance CPD
— — 10 — —
pF
(CL = 50 pF, tr = tf = 6 ns)
Note: CPD is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
ICC (opr) = CPD VCC fIN + ICC
Rev.5.00, Jan.27.2004, page 5 of 7

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