HEF4505BDB 查看數據表（PDF） - Philips Electronics
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HEF4505BDB Datasheet PDF : 8 Pages
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Philips Semiconductors
64-bit, 1-bit per word random access
read/write memory
Product specification
HEF4505B
LSI
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL MIN. TYP. MAX.
Minimum strobe pulse
width; LOW
Read cycle time
Write cycle time
Read access time
Address recovery time
Read recovery time
Write recovery time
3-state propagation delays
Output disable times
Set-up times
An → ST
R/W → ST
DIN → ST
R/W → ST
5
10 tSTL
15
5
10 tRC
15
5
10 tWC
15
5
10 tACC
15
5
10 tAR
15
5
10 tRR
15
5
10 tWR
15
5
10
tPHZ,
tPLZ
15
5
10 tsuA
15
5
10 tsuR
15
5
10 tsuD
15
5
10 tsuW
15
75 35
ns
45 22
ns
30 15
ns
350 700 ns
250 500 ns
210 420 ns
220 440 ns
125 250 ns
75 150 ns
330 660 ns
135 270 ns
100 200 ns
80 40
ns
40 20
ns
25 10
ns
180 90
ns
120 60
ns
90 45
ns
75 35
ns
45 25
ns
40 20
ns
105 210 ns
60 125 ns
55 115 ns
−20 −40
ns
−10 −20
ns
−5 −10
ns
−30 −60
ns
−15 −30
ns
−5 −10
ns
160 80
ns
75 35
ns
45 20
ns
240 120
ns
100 50
ns
75 35
ns
TYPICAL EXTRAPOLATION
FORMULA
303 ns + (0,55 ns/pF) CL
124 ns + (0,23 ns/pF) CL
92 ns + (0,16 ns/pF) CL
January 1995
4
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