HM5116400 查看數據表（PDF） - Hitachi -> Renesas Electronics
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HM5116400 Datasheet PDF : 33 Pages
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HM5116400 Series, HM5117400 Series
DC Characteristics
(Ta = 0 to +70˚C, VCC = 5 V 10%, VSS = 0 V) (HM5116400 Series)
HM5116400
-5
-6
-7
Parameter
Operating current*1, *2
Standby current
Symbol
I CC1
I CC2
Min Max Min Max Min Max Unit
— 90 — 80 — 70 mA
— 2 — 2 — 2 mA
— 1 — 1 — 1 mA
Standby current
ICC2
(L-version)
-only refresh current*2 ICC3
Standby current*1
I CC5
— 150 — 150 — 150 A
— 90 — 80 — 70 mA
— 5 — 5 — 5 mA
-before-
refresh
ICC6
current
Fast page mode current*1, *3 ICC7
Battery backup current
ICC10
(Standby with CBR refresh)
(L-version)
Input leakage current
I LI
Output leakage current
I LO
— 90 — 80 — 70 mA
— 80 — 70 — 60 mA
— 350 — 350 — 350 A
–10 10 –10 10 –10 10 A
–10 10 –10 10 –10 10 A
Test conditions
tRC = min
TTL interface
,
= VIH
Dout = High-Z
CMOS interface
,
VCC – 0.2 V
Dout = High-Z
CMOS interface
,
VCC – 0.2 V
Dout = High-Z
tRC = min
= VIH
= VIL
Dout = enable
tRC = min
tPC = min
CMOS interface
Dout = High-Z, CBR
refresh: tRC = 31.3 s
tRAS 0.3 s
0 V Vin 7 V
0 V Vin 7 V
Dout = disable
Output high voltage
VOH
2.4 VCC 2.4 VCC 2.4 VCC V
High Iout = –5 mA
Output low voltage
VOL
0 0.4 0 0.4 0 0.4 V
Low Iout = 4.2 mA
Notes : 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while
3. Address can be changed once or less while
= VIL.
= VIH.
8
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