HMC308(V03) 查看數據表（PDF） - Hittite Microwave

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HMC308
(Rev.:V03)

GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz

Hittite Microwave 

MICROWAVE CORPORATION

v03.1103

HMC308

GENERAL PURPOSE 100 mW GaAs

MMIC AMPLIFIER, 0.8 - 3.8 GHz

8

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+7.0 Vdc

RF Input Power (RFin)(Vdd = +5.0 Vdc) +10 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 6.25 mW/°C above 85 °C)

0.406 W

Thermal Resistance

(channel to lead)

160 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Typical Supply Current vs. Vdd

Vdd (Vdc)

+2.5

+3.0

+3.5

+4.5

+5.0

+5.5

Idd (mA)

49

50

51

50

53

54

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

8 - 46

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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