HS-303RH-T 查看數據表（PDF） - Intersil
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HS-303RH-T Datasheet PDF : 2 Pages
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Functional Diagram
IN
N
P
D
Die Characteristics
DIE DIMENSIONS:
(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil
METALLIZATION:
Type: Al
Thickness: 12.5kÅ ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Gold
Metallization Mask Layout
LOGIC
0
1
SBDIP TRUTH TABLE
SW1AND SW2 SW3 AND SW4
OFF
ON
ON
OFF
PASSIVATION:
Type: Silox (SiO2)
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
HS-303RH-T
D3
D4
D1
D2
S1
S2
IN1
IN2
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