75623S 查看數據表（PDF） - Fairchild Semiconductor
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75623S Datasheet PDF : 10 Pages
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HUFA75623P3, HUFA75623S3ST
Typical Performance Curves (Continued)
300
SINGLE PULSE
100
TJ
TC
=
=
MAX RATED
25oC
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
1
1
100µs
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
10
100
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
30
20
TJ = 175oC
10
0
2
TJ = -55oC
TJ = 25oC
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 10V, ID = 22A
2.0
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
STARTING TJ = 150oC
STARTING TJ = 25oC
10
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
40
VGS = 20V
VGS = 10V
30
VGS = 7V
VGS = 6V
20
VGS = 5V
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
-80 -40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
HUFA75623P3, HUFA75623S3ST Rev. B
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