HUR6060 查看數據表（PDF） - Sirectifier Electronics
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比赛名单
HUR6060
Sirectifier Electronics
HUR6060 Datasheet PDF : 3 Pages
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HUR6060
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
160
A
140
120
IF
100
80
60
TVJ= 25°C
TVJ=100°C
TVJ=150°C
40
20
0
0
1
2V
VF
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.5
Qr
4000
TVJ= 100°C
nC VR = 300V
3000
Qr
2000
IF=120A
IF= 60A
IF= 30A
1000
0
100
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -di /dt
F
140
ns
130
trr
120
110
TVJ= 100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
100
90
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus T
VJ
1
K/W
0.1
ZthJC
0.01
80
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
80
TVJ= 100°C
A VR = 300V
60
IRM
40
IF=120A
IF= 60A
IF= 30A
20
0
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -di /dt
F
20
1.6
V
VFR
15
tfr
us
tfr
1.2
VFR
10
0.8
5
0.4
TVJ= 100°C
IF = 60A
0
0 200 400
0.0
600 A80/u0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus di /dt
F
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.324
2
0.125
3
0.201
0.0052
0.0003
0.0385
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t
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