HUR6060PT 查看數據表（PDF） - Sirectifier Electronics
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产品描述 (功能)
比赛名单
HUR6060PT
Sirectifier Electronics
HUR6060PT Datasheet PDF : 3 Pages
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HUR6060PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70
A
60
IF 50
40
30
20
10
TVJ=150°C
TVJ=100°C
TVJ=25°C
3000
nC
TVJ= 100°C
VR = 300V
2500
Qr
2000
1500
IF= 60A
IF= 30A
IF= 15A
1000
500
50
A
TVJ= 100°C
VR = 300V
IRM 40
30
IF= 60A
IF= 30A
IF= 15A
20
10
0
0.0 0.5 1.0 1.5 V2.0
VF
Fig. 1 Forward current IF versus VF
0
100
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -di /dt
F
0
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -di /dt
F
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus T
VJ
130
ns
120
trr
110
100
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
90
80
70
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
20
V
VFR
tfr
15
1.2
VFR
us
tfr
0.9
10
0.6
5
0.3
TVJ= 100°C
IF = 30A
0
0.0
0 200 400 600 A80/u0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus di /dt
F
1
K/W
0.1
ZthJC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.465
2
0.179
3
0.256
0.0052
0.0003
0.0396
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t
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