IDT54FCT162701ATPVB 查看數據表（PDF） - Integrated Device Technology
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IDT54FCT162701ATPVB Datasheet PDF : 9 Pages
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IDT54/74FCT162701T/AT
FAST CMOS 18-BIT R/W BUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT162701T
Parameter
Test Conditions(1)
Min.(2) Max.(2)
PROPAGATION DELAYS
1
B1-18 to A 1-18
Read path/latch
1.5
6.5
2
LE (Low to Hi) to A 1-18
3
CLK to FF
Read path/latch
Write path
1.5
5.7
2
7.0
4
CLK to B 1-18
Write path
1
6.0
SETUP & HOLD TIMES(3)
5
A1-18 to CLK (Low to Hi) Setup
Write path
2.5
—
6
A1-18 to CLK (Low to Hi) Hold
Write path
0
—
7
B1-18 to LE (Hi to Low) Setup
Read path/latch
3
—
8
B1-18 to LE (Hi to Low) Hold
9
WCE, RCE (Low) to CLK Setup
10
WCE, RCE (Low) to CLK Hold
11
RESET (Low) to CLK Setup
12
RESET (Low) to CLK Hold
Read path/latch
Write path
Write path
Write path
Write path
0
—
3
—
0
—
3
—
0
—
ENABLE & DISABLE TIMES(3)
13
OEBA Low to A1-18 Enable
14
OEBA High to A 1-18 Disable
15
OEAB Low to B1-18 Enable
16
OEAB High to B 1-18 Disable
Write path
Write path
Read path
Read path
1.5
7.0
1.5
6.0
1.5
7.0
1.5
6.0
MINIMUM PULSE WIDTHS
17
CLK HIGH or LOW Pulse Width
Write path
3.0
—
18
LE HIGH Pulse Width
Read path/latch
3.0
—
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. Guaranteed but not tested.
FCT162701AT
Min.(2) Max.(2)
1.5
5.5
1.5
4.7
2
6.0
1
5.2
2.5
—
0
—
3
—
0
—
3
—
0
—
3
—
0
—
1.5
6.0
1.5
5.0
1.5
6.0
1.5
5.0
3.0
—
3.0
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2915 tbl 07
5.15
7
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