ARF678S45 查看數據表（PDF） - Power Semiconductors

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ARF678S45

FAST RECOVERY DIODE

Power Semiconductors 

ARF678 FAST RECOVERY DIODE

FINAL SPECIFICATION apr 97 - ISSUE : 01

FORWARD CHARACTERISTIC

Tj = 150 °C

6000

5000

4000

3000

2000

1000

0

0.6

1.6

2.6

3.6

4.6

5.6

Forward Voltage [V]

ANSALDO

SURGE CHARACTERISTIC

Tj = 150 °C

30

25

20

15

10

5

0

1

10

100

n° cycles

TRANSIENT THERMAL IMPEDANCE

DOUBLE SIDE COOLED

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

0.001

0.01

0.1

1

t[s]

10

100

All the characteristics given in this data sheet are guaranteed only with uniform

clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm

and roughness < 2 µm.

In the interest of product improvement ANSALDO reserves the right to change

any data given in this data sheet at any time without previous notice.

If not stated otherwise the maximum value of ratings (simbols over shaded

background) and characteristics is reported.

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