IDT70V08S 查看數據表（PDF） - Integrated Device Technology
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IDT70V08S Datasheet PDF : 20 Pages
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IDT70V08S/L
High-Speed 64K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4,5)
70V08X15
Com'l Only
70V08X20
Com'l Only
Symbol
Parameter
Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
15
____
20
____
ns
tAA
Address Access Time
tACE
Chip Enable Access Time(3)
____
15
____
20
ns
____
15
____
20
ns
tAOE
Output Enable Access Time
____
10
____
12
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1,2)
tHZ
Output High-Z Time(1,2)
tPU
Chip Enable to Power Up Time(2,5)
tPD
Chip Disable to Power Down Time(2,5)
tSOP
Semaphore Flag Update Pulse (OE or SEM)
3
____
3
____
ns
3
____
3
____
ns
____
12
____
12
ns
0
____
0
____
ns
____
15
____
20
ns
10
____
10
____
ns
tSAA
Semaphore Address Access Time
____
15
____
20
ns
3740 tbl 12a
70V08X25
Com'l Only
70V08X35
Com'l Only
Symbol
Parameter
Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
25
____
35
____
ns
tAA
Address Access Time
tACE
Chip Enable Access Time(3)
____
25
____
35
ns
____
25
____
35
ns
tAOE
Output Enable Access Time
____
15
____
20
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1,2)
tHZ
Output High-Z Time(1,2)
tPU
Chip Enable to Power Up Time(2,5)
tPD
Chip Disable to Power Down Time(2,5)
tSOP
Semaphore Flag Update Pulse (OE or SEM)
3
____
3
____
ns
3
____
3
____
ns
____
15
____
20
ns
0
____
0
____
ns
____
25
____
45
ns
15
____
15
____
ns
tSAA
Semaphore Address Access Time
____
35
____
45
ns
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE= VIH and SEM = VIL.
4. 'X' in part numbers indicates power rating (S or L).
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
3740 tbl 12b
7
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