IDT71028 查看數據表（PDF） - Integrated Device Technology
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IDT71028 Datasheet PDF : 8 Pages
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IDT71028 CMOS Static RAM
1 Meg (256K x 4-Bit)
AC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
Commercial and Industrial Temperature Ranges
Symbol
Parameter
71028S12
71028S15
71028S20
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
12
—
15
—
20
—
ns
tAA
Address Access Time
—
12
—
15
—
20
ns
tACS
tCLZ(1 )
Chip Select Access Time
Chip Select to Output in Low-Z
—
12
—
15
—
20
ns
3
—
3
—
3
—
ns
tCHZ(1 )
Chip Deselect to Output in High-Z
0
6
0
7
0
8
ns
tOE
tOLZ (1 )
Output Enable to Output Valid
Output Enable to Output in Low-Z
—
6
—
7
—
8
ns
0
—
0
—
0
—
ns
tOHZ (1 )
Output Disable to Output in High-Z
0
5
0
5
0
7
ns
tOH
Output Hold from Address Change
tPU(1 )
Chip Select to Power-Up Time
tPD(1 )
Chip Deselect to Power-Down Time
4
—
4
—
4
—
ns
0
—
0
—
0
—
ns
—
12
—
15
—
20
ns
Write Cycle
tWC
Write Cycle Time
12
—
15
—
20
—
ns
tAW
Address Valid to End-of-Write
10
—
12
—
15
—
ns
tCW
Chip Select to End-of-Write
10
—
12
—
15
—
ns
tAS
Address Set-Up Time
0
—
0
—
0
—
ns
tWP
Write Pulse Width
10
—
12
—
15
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
7
—
8
—
9
—
ns
tDH
tOW(1 )
Data Hold Time
Output Active from End-of-Write
0
—
0
—
0
—
ns
3
—
3
—
4
—
ns
tWHZ(1 )
Write Enable to Output in High-Z
0
5
0
5
0
8
ns
NOTE:
1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
2966 tbl 09
6.442
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