Die Characteristics
DIE DIMENSIONS:
59milsx80milsx19mils
1500μmx2020μmx483μm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
HFA1109
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
TRANSISTOR COUNT:
130
SUBSTRATE POTENTIAL (POWERED UP):
Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1109
NC
NC
NC
NC
-IN
+IN
V-
V+
OUT
NC
NC
NC NC
11
FN4019.5
April 23, 2007