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IDT74FCT621T(2006) 查看數據表(PDF) - Integrated Device Technology

零件编号
产品描述 (功能)
比赛名单
IDT74FCT621T
(Rev.:2006)
IDT
Integrated Device Technology IDT
IDT74FCT621T Datasheet PDF : 6 Pages
1 2 3 4 5 6
IDT74FCT621T/AT
FAST CMOS OCTAL BUS TRANSCEIVER (OPEN DRAIN)
PIN CONFIGURATION
GAB 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
GND 10
20
VCC
19 GBA
18
B1
17
B2
16
B3
15
B4
14
B5
13
B6
12
B7
11
B8
SOIC
TOP VIEW
INDUSTRIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
Unit
VTERM(2) Terminal Voltage with Respect to GND
–0.5 to +7
V
VTERM(3) Terminal Voltage with Respect to GND –0.5 to VCC+0.5 V
TSTG Storage Temperature
–65 to +150
°C
IOUT DC Output Current
–60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
Parameter(1)
Conditions Typ. Max. Unit
CIN
Input Capacitance
VIN = 0V
6
10 pF
COUT
Output Capacitance VOUT = 0V
8
12 pF
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
Description
GBA, GAB
Enable Inputs
A1 – A8
A Inputs or Open-drain Outputs
B1 – B8
B Inputs or Open-drain Outputs
FUNCTION TABLE(1)
Enable Inputs
GBA
GAB
Function
L
L
B data to A bus
H
H
A data to B bus
H
L
OFF
L
H
B data to A bus
A data to B bus
NOTE:
1. H = HIGH Voltage Level.
L = LOW Voltage Level.
OFF = HIGH if pull-up resistor is connected to Open-Drain output.
2

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