IHW20N120R 查看數據表（PDF） - Infineon Technologies

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IHW20N120R

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

Soft Switching Series

IHW20N120R

4mJ

3mJ

2mJ

Eoff

1mJ

0mJ

10A

20A

30A

IC, COLLECTOR CURRENT

Figure 13. Typical turn-off energy as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=29Ω,

Dynamic test circuit in Figure E)

2.5 mJ Eoff

2.0 mJ

1.5 mJ

1.0 mJ

0.5 mJ

0.0 mJ

5Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

RG, GATE RESISTOR

Figure 14. Typical turn-off energy as a

function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=20A,

Dynamic test circuit in Figure E)

2mJ

Eoff

1mJ

3mJ

2mJ

Eoff

1mJ

0mJ

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical turn-off energy as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=20A, RG=29Ω,

Dynamic test circuit in Figure E)

0mJ

400V

500V

600V

700V

800V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical turn-off energy as a

function of collector emitter

voltage

(inductive load, TJ=175°C,

VGE=0/15V, IC=20A, RG=29Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.4 May 06

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