IKA08N65F5 查看數據表（PDF） - Infineon Technologies

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IKA08N65F5

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

IKA08N65F5

Highspeedswitchingseriesfifthgeneration

DiodeCharacteristic,atTvj=150°C

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=150°C,

VR=400V,

IF=4.0A,

diF/dt=800A/µs

Tvj=150°C,

VR=400V,

IF=2.0A,

diF/dt=800A/µs

-

56

- ns

- 0.27 - µC

- 7.5 - A

- -134 - A/µs

-

42

- ns

- 0.19 - µC

- 7.4 - A

- -240 - A/µs

7

Rev.2.1,2015-05-05

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