IL317L 查看數據表（PDF） - IK Semicon Co., Ltd
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IL317L Datasheet PDF : 4 Pages
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IL317L
ELECTRICAL CHARACTERISTICS DIE ON WAFER
(VI - Vo = 3.0V, IO = 40mA, TA=25°C, unless otherwise noted, Imax and Pmax (Note 1)
CHARACTERISTIC
Reference Voltage
(TA= -10°C to +125°C)
Line Regulation (Note 2)
Line Regulation (TA= -10°C to
+125°C), (Note 2)
. Load Regulation, (Note 2)
Load Regulation (TA= -10°C to
+125°C), (Note 2)
Adjustment Pin Current
Adjustment Pin Current Change
Maximum Output Current
Minimum Load Current to Maintain
Regulation VO=1.2V, f=120Hz
Ripple Rejection
Symbol
VO
∆VOV
∆VOV
∆VOI
∆VOI
IAdj
∆IAdj
IO MAX
IL MIN
RR
TEST CONDITION
3.0V≤ VI-Vo ≤40V
10mA≤ Io ≤ Imax, PD ≤ Pmax
3.0V≤ VI-Vo ≤40V, Io=10mA
3.0V≤ VI-Vo ≤40V, Io=10mA
10mA≤ Io ≤ Imax, VO = 5.0V
10mA≤ Io ≤ Imax, VO = 5.0V
3.0V≤ VI-Vo ≤40V
10mA≤ Io ≤ Imax, PD ≤ Pmax
VI-VO =3.0V, PD ≤ Pmax
VI-VO = 40V, PD ≤ Pmax
VI-Vo ≤40V
Vo = 1.2V, f= 120Hz
Min Max Unit
1.2 1.3 V
160 mV
180 mV
6.0 mV
10 mV
10
100 µA
5.0 µA
0.1 0.3 A
0.025 0.15
10 mA
66
dB
Notes: 1. Imax=100mA, Pmax=625mW;
2. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating
effects must be taken into account separately. Pulse testing with low duty cycle is used.
Fig.1 Test Circuit for Vo>1.25V
Сi=0,1µF, Сo=1,0 µF.
Vo=1,25(1+R2/R1)IADJ R2
Fig.2 Test Circuit for Vo=1.25V
Сi=0,1µF, Сo=1,0 µF.
2
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