IRF6616 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

比赛名单

IRF6616

DirectFET Power MOSFET

International Rectifier 

IRF6616

1000

100

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.0V

2.8V

2.5V

1000

100

TOP

BOTTOM

VGS

10V

5.0V

4.5V

3.5V

3.0V

2.8V

2.5V

10

1

0.1

2.5V

≤ 60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

1000

100

TJ = 150°C

TJ = 25°C

10 TJ = -40°C

2.5V

10

1

0.1

≤ 60µs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Output Characteristics

2.0

ID = 15A

VGS = 10V

1.5

VGS = 4.5V

1.0

0.1

1.5

VDS = 10V

≤ 60µs PULSE WIDTH

2.0

2.5

3.0

3.5

4.0

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

100000

10000

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

Coss

Crss

100

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

4

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 7. Normalized On-Resistance vs. Temperature

12

TJ = 25°C

10

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

8

Vgs = 5.0V

Vgs = 10V

6

4

2

0 20 40 60 80 100 120 140 160

ID, Drain Current (A)

Fig 9. Typical On-Resistance vs.

Drain Current and Gate Voltage

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