IRF6633 查看數據表（PDF） - International Rectifier
零件编号
产品描述 (功能)
比赛名单
IRF6633 Datasheet PDF : 10 Pages
| |||
IRF6633
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
20
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
Gate Threshold Voltage
1.4
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
35
Qg
Total Gate Charge
–––
Qgs1
Pre-Vth Gate-to-Source Charge
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
Qgd
Gate-to-Drain Charge
–––
Qgodr
Gate Charge Overdrive
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
Qoss
Output Charge
–––
RG
Gate Resistance
–––
td(on)
Turn-On Delay Time
–––
tr
Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf
Fall Time
–––
Ciss
Input Capacitance
–––
Coss
Output Capacitance
–––
Crss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
–––
@TC=25°C (Body Diode)
ISM
Pulsed Source Current
–––
(Body Diode) i
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
Typ.
–––
16
4.1
7.0
1.8
-5.2
–––
–––
–––
–––
–––
11
3.3
1.2
4.0
2.5
5.2
8.8
1.5
9.7
31
12
4.3
1250
630
200
Typ.
–––
–––
0.8
18
32
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
5.6 mΩ VGS = 10V, ID = 16A g
9.4
VGS = 4.5V, ID = 13A g
2.2
V VDS = VGS, ID = 250µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 13A
17
–––
VDS = 10V
––– nC VGS = 4.5V
–––
ID = 13A
–––
See Fig. 15
–––
––– nC VDS = 10V, VGS = 0V
––– Ω
–––
VDD = 16V, VGS = 4.5V g
–––
ID = 13A
––– ns Clamped Inductive Load
–––
–––
VGS = 0V
––– pF VDS = 10V
–––
ƒ = 1.0MHz
Max. Units
Conditions
53
MOSFET symbol
A showing the
132
integral reverse
p-n junction diode.
1.0
V TJ = 25°C, IS = 13A, VGS = 0V g
27 ns TJ = 25°C, IF = 13A
48 nC di/dt = 500A/µs g
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
Share Link: 