IRF6678TR1 查看數據表（PDF） - International Rectifier
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IRF6678TR1 Datasheet PDF : 9 Pages
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IRF6678
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
100
Qg
Total Gate Charge
–––
Qgs1
Pre-Vth Gate-to-Source Charge
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
Qgd
Gate-to-Drain Charge
–––
Qgodr
Gate Charge Overdrive
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
Qoss
Output Charge
–––
RG
Gate Resistance
–––
td(on)
Turn-On Delay Time
–––
tr
Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf
Fall Time
–––
Ciss
Input Capacitance
–––
Coss
Output Capacitance
–––
Crss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
–––
(Body Diode)
ISM
Pulsed Source Current
–––
(Body Diode)
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
Typ.
–––
24
1.7
2.3
–––
-6.3
–––
–––
–––
–––
–––
43
12
4.0
15
12
19
28
1.0
21
71
27
8.1
5640
1260
570
Typ.
–––
–––
0.78
43
46
Max. Units
Conditions
–––
–––
2.2
3.0
2.25
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 30A
VGS = 4.5V, ID = 24A
V VDS = VGS, ID = 250µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 24A
65
–––
VDS = 15V
––– nC VGS = 4.5V
ID = 24A
–––
See Fig. 17
–––
––– nC VDS = 16V, VGS = 0V
2.2 Ω
–––
VDD = 16V, VGS = 4.5V
––– ns ID = 24A
–––
Clamped Inductive Load
–––
–––
VGS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Max. Units
Conditions
3.5
MOSFET symbol
A showing the
240
integral reverse
p-n junction diode.
1.2 V TJ = 25°C, IS = 24A, VGS = 0V
65 ns TJ = 25°C, IF = 24A
69 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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