IRF7105 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

比赛名单

IRF7105

HEXFET® Power MOSFET

International Rectifier 

IRF7105

N-Channel

VSD , Source-to-Drain Voltage ( V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

TA , Ambient Temperature ( °C )

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

-VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 11a. Gate Charge Test Circuit

4

VDS , Drain-to-Source Voltage ( V )

Fig 8. Maximum Safe Operating Area

VDS

VGS

RG

RD

D.U.T.

+

-

VDD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

10V

QGS

VG

QG

QGD

Charge

Fig 11b. Basic Gate Charge Waveform

www.irf.com

Share Link: