IRF7311TR 查看數據表（PDF） - International Rectifier

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IRF7311TR

HEXFET® Power MOSFET

International Rectifier 

IRF7311

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

––– 0.023 0.029

––– 0.030 0.046

Ω

VGS = 4.5V, ID = 6.0A „

VGS = 2.7V, ID = 5.2A „

VGS(th)

Gate Threshold Voltage

0.7 ––– ––– V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

––– 20 ––– S VDS = 10V, ID = 6.0A

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 5.0

µA

VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 55°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = 12V

––– ––– -100

VGS = -12V

Qg

Total Gate Charge

––– 18 27

ID = 6.0A

Qgs

Gate-to-Source Charge

––– 2.2 3.3 nC VDS = 10V

Qgd

Gate-to-Drain ("Miller") Charge

––– 6.2 9.3

VGS = 4.5V, See Fig. 10 „

td(on)

Turn-On Delay Time

––– 8.1 12

VDD = 10V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 17 25

––– 38 57

––– 31 47

ns ID = 1.0A

RG = 6.0Ω

RD = 10Ω „

Ciss

Input Capacitance

––– 900 –––

VGS = 0V

Coss

Output Capacitance

––– 430 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 200 –––

ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

––– ––– 2.5

––– ––– 26

MOSFET symbol

showing the

A integral reverse

p-n junction diode.

D

G

S

––– 0.72 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ

––– 52 77

––– 58 86

ns TJ = 25°C, IF = 1.7A

nC di/dt = 100A/µs ƒ

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 12mH

RG = 25Ω, IAS = 4.1A.

ƒ ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Surface mounted on 1 in square Cu board

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