IRF9520 查看數據表（PDF） - Intersil

零件编号

产品描述 (功能)

比赛名单

IRF9520

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

Intersil 

Data Sheet

IRF9520

July 1999 File Number 2281.3

6A, 100V, 0.600 Ohm, P-Channel Power

MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

P-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. These types

can be operated directly from integrated circuits.

Formerly developmental type TA17501.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9520

TO-220AB

IRF9520

NOTE: When ordering, use the entire part number.

Features

• 6A, 100V

• rDS(ON) = 0.600Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

4-3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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