IRFIZ48 查看數據表（PDF） - International Rectifier
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IRFIZ48 Datasheet PDF : 8 Pages
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IRFIZ48N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.016 Ω VGS = 10V, ID = 22A
2.0 ––– 4.0
22 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 32A
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 89
––– ––– 20
––– ––– 39
––– 11 –––
ID = 32A
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
––– 78 ––– ns ID = 32A
––– 32 –––
RG = 5.1Ω
––– 48 –––
RD = 0.85Ω, See Fig. 10
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
––– 1900 –––
VGS = 0V
––– 620 ––– pF VDS = 25V
––– 270 –––
ƒ = 1.0MHz, See Fig. 5
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 36
showing the
A integral reverse
G
––– ––– 210
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V
––– 94 140 ns TJ = 25°C, IF = 32A
––– 360 540 nC di/dt = 100A/µs
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
R VDD = 25V, starting TJ = 25°C, L = 530µH
RG = 25Ω, IAS = 32A. (See Figure 12)
S ISD ≤ 32A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
T Pulse width ≤ 300µs; duty cycle ≤ 2%.
U t=60s, ƒ=60Hz
Uses IRFZ48N data and test conditions
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