IRG4PC50KD 查看數據表（PDF） - International Rectifier
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IRG4PC50KD Datasheet PDF : 10 Pages
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PD -91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast IGBT
Features
q Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10µs @125°C, VGE = 15V
q Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
q IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
q Industry standard TO-247AC package
Benefits
q Generation 4 IGBTs offer highest efficiencies available
q HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
q Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
52
30
104
104
25
280
10
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RqJC
RqJC
RqCS
RqJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
0.64
0.83
—
40
—
Units
°C/W
g (oz)
1
12/3/98
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