IRHM7230 查看數據表（PDF） - International Rectifier

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IRHM7230

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR

International Rectifier 

Post-Irradiation

IRHM7230, IRHM8230 Devices

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 8a. Gate Stress of VGSS

Equals 12 Volts During

Radiation

Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals

of Rad Hard HEXFET During

80% of BVDSS During Radiation

1x1012 Rad (Si)/Sec Exposure

Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

www.irf.com

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