IRHM7264SE(1996) 查看數據表（PDF） - International Rectifier
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IRHM7264SE Datasheet PDF : 4 Pages
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IRHM7264SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
IRHM7264SE
100K Rads (Si)
min. max.
BVDSS Drain-to-Source Breakdown Voltage 250 —
VGS(th) GateThreshold Voltage
2.0 4.5
IGSS
Gate-to-Source Leakage Forward
— 100
IGSS
Gate-to-Source Leakage Reverse
— -100
IDSS
Zero Gate Voltage Drain Current
— 50
RDS(on)1 Static Drain-to-Source
— 0.087
On-State Resistance One
VSD
Diode Forward Voltage
— 1.4
Units
V
nA
µA
Ω
V
Test Conditions
VGS = 0V, ID = 1.0 mA
VGS = VDS, ID = 1.0 mA
VGS = 20V
VGS = -20V
VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID = 22.8A
TC = 25°C, IS = 35A,VGS = 0V
Table 2. High Dose Rate
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
— — 200 — — 200 V Applied drain-to-source voltage
during gamma-dot
— 10 — — 10 — A Peak radiation induced photo-current
— 16 — — 2.3 — A/µsec Rate of rise of photo-current
— 1 — — 20 — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter Typ.
BVDSS
250
Units
V
LET (Si)
Fluence Range
Ion (MeV/mg/cm2) (ions/cm2) (µm)
Ni
28
1 x 105
~35
VDS Bias
(V)
200
VGS Bias
(V)
-5
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