IRLR3105PBF(2004) 查看數據表（PDF） - International Rectifier
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IRLR3105PBF Datasheet PDF : 11 Pages
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IRLR/U3105PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max.
55 ––– –––
––– 0.056 –––
––– 30 37
––– 35 43
1.0 ––– 3.0
15 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– ––– 20
––– ––– 5.6
––– ––– 9.0
––– 8.0 –––
––– 57 –––
––– 25 –––
––– 37 –––
––– 4.5 –––
––– 7.5 –––
––– 710 –––
––– 150 –––
––– 28 –––
––– 890 –––
––– 110 –––
––– 210 –––
Units
V
V/°C
mΩ
V
S
µA
nA
nC
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
VGS = 5.0V, ID = 13A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 15A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS = -16V
ID = 15A
VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
VDD = 28V
ID = 15A
RG = 24Ω
VGS = 5.0V, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 25
A showing the
integral reverse
G
––– ––– 100
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 15A, VGS = 0V
––– 52 78 ns TJ = 25°C, IF = 15A, VDD = 28V
––– 82 120 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 11
2
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