IS61C3216AL 查看數據表（PDF） - Integrated Silicon Solution

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IS61C3216AL

32K x 16 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C3216AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

Parameter

VDD for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

VDD = 2.0V, CE ≥ VDD – 0.2V

VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V

tSDR DataRetentionSetupTime SeeDataRetentionWaveform

tRDR RecoveryTime

See Data Retention Waveform

Note:

1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.

Com.

Ind.

typ.(1)

DATA RETENTION WAVEFORM (CE Controlled)

VDD

4.5V

tSDR

Data Retention Mode

2.2V

VDR

CE

GND

CE ≥ VDD - 0.2V

ISSI ®

Min. Typ.

2.0

——

——

200

0

tRC

Max. Unit

5.5 V

350 µA

400

— ns

— ns

tRDR

12

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

09/26/05

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