IS61LV2568-10KI_03 查看數據表（PDF） - Integrated Silicon Solution

零件编号

产品描述 (功能)

比赛名单

IS61LV2568-10KI_03

256K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61LV2568

ISSI ®

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage(1)

VIL

Input LOW Voltage(1)

ILI

Input Leakage

ILO

Output Leakage

Test Conditions

VDD = Min., IOH = –4.0 mA

VDD = Min., IOL = 8.0 mA

GND ≤ VIN ≤ VDD

GND ≤ VOUT ≤ VDD, Outputs Disabled

Note:

1. VIL(min) = –0.3V (DC); VIL(min) = –2.0V (pulse width - 2.0 ns).

VIH(max) = VDD + 0.3V (DC); VIH(max) = VDD + 2.0V (pulse width - 2.0 ns).

Com.

Ind.

Com.

Ind.

Min.

Max.

Unit

2.4

—

V

—

0.4

V

2.0 VDD + 0.3

V

–0.3

0.8

V

–1

1

µA

–5

5

–1

1

µA

–5

5

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-10 ns

-12 ns

Symbol

ICC

ISB1

ISB2

Parameter

VDD Operating

Supply Current

TTL Standby

Current

(TTL Inputs)

CMOS Standby

Current

(CMOS Inputs)

Test Conditions

VDD = Max., CE = VIL

IOUT = 0 mA, f = Max.

VDD = Max.,

VIN = VIH or VIL

CE ≥ VIH, f = max

VDD = Max.,

CE ≥ VDD – 0.2V,

VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

Com.

Ind.

Com.

Ind.

Com.

Ind.

Min. Max.

— 125

— 135

— 40

— 50

Min. Max. Unit

— 110 mA

— 120

— 35 mA

— 45

— 10

— 20

— 10 mA

— 20

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

CAPACITANCE(1,2)

Symbol

CIN

CI/O

Parameter

Input Capacitance

Input/Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

Unit

6

pF

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

02/07/03

Share Link: