IS61LV2568L 查看數據表（PDF） - Integrated Silicon Solution

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IS61LV2568L

256K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61LV2568L

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

tRC Read Cycle Time

tAA Address Access Time

tOHA Output Hold Time

tACE CE Access Time

tDOE OE Access Time

tLZOE(2) OE to Low-Z Output

tHZOE(2) OE to High-Z Output

tLZCE(2) CE to Low-Z Output

tHZCE(2) CE to High-Z Output

- 8 ns

-10 ns

Min. Max

Min. Max.

Unit

8—

10 —

ns

—8

— 10

ns

2.5 —

2.5 —

ns

—8

— 10

ns

— 3.5

—4

ns

0—

0—

ns

0 3.5

0

4

ns

3.5 —

3—

ns

0 3.5

0

4

ns

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V

and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.

6

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. D

04/28/08

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