IS62LV12816L-100B 查看數據表（PDF） - Integrated Silicon Solution

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IS62LV12816L-100B

128K x 16 CMOS STATIC RAM

Integrated Silicon Solution 

IS62LV12816L

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

tSDR

tRDR

Parameter

Vcc for Data Retention

Data Retention Current

Data Retention Setup Time

Recovery Time

Test Condition

See Data Retention Waveform

Vcc = 2.0V, CE ≥ Vcc – 0.2V

See Data Retention Waveform

See Data Retention Waveform

Min. Max. Unit

1.5 3.3

V

— 15

µA

0—

ns

tRC —

ns

DATA RETENTION WAVEFORM (CE Controlled)

tSDR

Data Retention Mode

tRDR

VCC

2.3V

2.0V

VDR

CE

GND

CE ≥ VCC – 0.2V

ISSI ®

8

Integrated Silicon Solution, Inc.

ADVANCE INFORMATION SR002-0C

08/20/98

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