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Philips Semiconductors
Low-voltage stabistor
Product specification
BA315
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
rdif
differential resistance
SF
temperature coefficient
Cd
diode capacitance
CONDITIONS
see Fig.2
IF = 0.1 mA
IF = 1 mA
IF = 5 mA
IF = 10 mA
IF = 100 mA
VR = 5 V
IF = 1 mA; f = 1 kHz
IF = 10 mA; f = 1 kHz
IF = 1 mA
VR = 0 V; f = 1 MHz
MIN. TYP. MAX. UNIT
480
−
540 mV
590
−
660 mV
670
−
740 mV
710
−
790 mV
875
−
1050 mV
−
−
1500 nA
−
50
−
Ω
−
6
7
Ω
−
−2.1
−
mV/K
−
−
3 pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point 8 mm from the body
thermal resistance from junction to ambient maximum lead length
VALUE
300
600
UNIT
K/W
K/W
1996 Mar 21
3