ISL8487E, ISL81487L, ISL81487E
Typical Performance Curves VCC = 5V, TA = 25°C, ISL8487E, ISL81487L and ISL81487E;
Unless Otherwise Specified (Continued)
DI
5
RO
0
RDIFF = 54Ω, CL = 100pF
5
0
DI
5
RO
0
RDIFF = 54Ω, CL = 100pF
5
0
4
B/Z
3
2
A/Y
1
0
TIME (20ns/DIV)
FIGURE 16. DRIVER AND RECEIVER WAVEFORMS,
LOW TO HIGH (ISL81487E)
4
3 A/Y
2 B/Z
1
0
TIME (20ns/DIV)
FIGURE 17. DRIVER AND RECEIVER WAVEFORMS,
HIGH TO LOW (ISL81487E)
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
518
PROCESS:
Si Gate CMOS
12
FN6051.7
February 27, 2006