ISL85001 查看數據表（PDF） - Intersil
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ISL85001 Datasheet PDF : 15 Pages
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ISL85001
Electrical Specifications
Typical Specifications are Measured at the Following Conditions: TA = -40°C to +85°C. Parameters with MIN
and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
ENABLE SECTION
EN Threshold
Rising Edge
1.2
1.7
2.2
V
Hysteresis
-
400
-
mV
EN Logic Input Current
-1
-
1
µA
FAULT PROTECTION
Thermal Shutdown Temperature
PWM UV Trip Level
PWM UVP Propagation Delay
TSD
THYS
VUV
Rising Threshold
Hysteresis
Referred to Nominal VOUT
-
150
-
°C
-
15
-
°C
70
75
80
%
-
270
-
ns
PWM OCP Threshold
OCP Blanking Time
VIN = VDD = 5V, (Note 4)
1.37 1.7 2.17
A
-
100
-
ns
POWER-GOOD
PG Trip Level Referred to Nominal VOUT
Lower Level, Falling Edge, with typically 15mV
hysteresis
85
88
91
%
Upper Level, Rising Edge, with typically 15mV
hysteresis
108 112 116
%
PG Propagation Delay
-
9
-
µs
PG Low Voltage
PG Leakage Current
SOFT-START SECTION
ISINK = 4mA
VPG = 5.5V, VFB = 0.6V, VDD = 5.5V
-
0.05 0.3
V
-1
-
1
µA
Soft-Start Threshold to Enable Buck
0.9
1
1.1
V
Soft-Start Threshold to Enable PG
2.5
3.0
3.5
V
Soft-Start Voltage High
-
3.45
-
V
Soft-Start Charging Current
20
30
40
µA
Soft-Start Pull-down
POWER MOSFET
VSS = 3.0V
-
25
-
mA
rDS(ON)
IOUT = 100mA, Die Resistance
-
120 200 mΩ
NOTES:
3. Test Condition: VIN = 15V, FB forced above regulation point (0.6V), no switching, and power MOSFET gate charging current not included.
4. Excluding the blanking time.
5
FN6769.1
March 17, 2009
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