K5L5628JTM-DH18 查看數據表（PDF） - Samsung

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K5L5628JTM-DH18

256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

Samsung 

K5L5628JT(B)M

PPrreelliimmiinnaarryy

MCP MEMORY

Table 1. PRODUCT LINE-UP

Synchronous/Burst

Speed Option

7B

(54MHz)

7C

(66MHz)

Asynchronous

Speed Option

7B

7C

(54MHz) (66MHz)

Max. Initial Access Time (tIAA, ns) 88.5

70 Max Access Time (tAA, ns)

90

80

VCC=1.7V-1.95V Max. Burst Access Time (tBA, ns) 14.5

11 Max CE Access Time (tCE, ns) 90

80

Max. OE Access Time (tOE, ns)

20

20 Max OE Access Time (tOE, ns) 20

20

Table 2. DEVICE BANK DIVISIONS

Bank 0

Mbit

Block Sizes

16 Mbit

Eight 4Kwords,

Thirty-one 32Kwords

Mbit

240 Mbit

Bank 1 ~ Bank 15

Block Sizes

Four hundred

eighty 32Kwords

8

Revision 1.0

November 2004

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