KHB2D0N60F 查看數據表（PDF） - KEC
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KHB2D0N60F Datasheet PDF : 7 Pages
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KHB2D0N60P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS
VDS=600V, VGS=0V,
Vth
VDS=VGS, ID=250 A
IGSS
VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.0A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Crss
Coss
VDS=480V, ID=2.0A
VGS=10V
(Note4,5)
VDD=300V
RL=150
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD
IS=2.0A, VGS=0V
trr
IS=2.0A, VGS=0V,
Qrr
dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 36.9mH, IS= 2.0A, VDD=50V, RG=25 , Starting Tj = 25 .
Note 3) IS 2.0A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
600
-
-
V
-
0.65
-
V/
-
-
10
A
2.0
-
4.0
V
-
-
100 nA
-
3.8
5.0
-
10.9 12
-
1.7
3
nC
-
5.0
5.5
-
-
28
-
-
60
ns
-
-
58
-
-
66
-
388 504
-
6.5
8.5
pF
-
46 59.4
-
-
2.0
A
-
-
8.0
-
-
1.5
V
-
300
-
ns
-
1.55
-
C
2007. 5. 10
Revision No : 0
2/7
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