J5502 查看數據表（PDF） - Fairchild Semiconductor

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J5502

NPN Planar Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

3

1A

900mA

800mA

700mA

600mA

500mA

2

400mA

300mA

200mA

I =100mA

1

B

0

0

1

2

3

4

5

6

7

V [V], COLLECTOR EMITTER VOLTAGE

CE

Figure 1. Static Characteristic

I =5I

CB

10

1

T =125oC

J

0.1

T =25oC

J

0.01

1

10

100

1000

I (mA), COLLECTOR CURRENT

C

Figure 3. Collector-Emitter Saturation Voltage

2

T =25oC

J

1

0.4A

I =0.2A

C

1.5A

1.0A

2.0A

0

1

10

100

1k

I [mA], BASE CURRENT

B

Figure 5. Typical Collector Saturation Voltage

V =1V

CE

100

T =125oC

J

T =25oC

J

10

1

1

10

100

1000

I [mA], COLLECTOR CURRENT)

C

Figure 2. DC current Gain

I =10I

C

B

10

1

T =125oC

J

0.1

T =25oC

J

0.01

1

10

100

1000

I (mA), COLLECTOR CURRENT

C

Figure 4. Collector-Emitter Saturation Voltage

I =5I

CB

1

T =25oC

J

T =125oC

J

0.1

1

10

100

1k

I [mA], COLLECTOR CURRENT

C

Figure 6. Base-Emitter Saturation Voltage

© 2008 Fairchild Semiconductor Corporation

KSC5502 Rev. A1

4

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