KTC4075F 查看數據表（PDF） - KEC
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KTC4075F Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
·High hFE : hFE=70~700.
·Low Noise : NF=1dB(Typ.), 10dB(Max.).
·Complementary to KTA2014F.
·Thin Fine Pitch Small Package.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
60
50
5
150
30
50
150
-55～150
UNIT
V
V
V
mA
mA
mW
℃
℃
KTC4075F
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
0.6+_ 0.05
3
B
0.8 +_ 0.05
1
C 0.38+0.02/-0.04
D
0.2 +_ 0.05
E
1.0+_ 0.05
G
0.35+_ 0.05
J
0.1+_ 0.05
K
0.15+_ 0.05
1. EMITTER
2. BASE
3. COLLECTOR
TFSM
Marking
Type Name
L
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
IEBO
hFE (Note)
VCE(sat)
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
Transition Frequency
fT
VCE=10V, IC=1mA
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
Noise Figure
VCE=6V, IC=0.1mA,
NF
f=1kHz, Rg=10kΩ
Note : hFE Classification O(2):70～140, Y(4):120～240, GR(6):200～400, BL(8):350~700
MIN.
-
-
70
-
80
-
TYP.
-
-
-
0.1
-
2.0
MAX.
0.1
0.1
700
0.25
-
3.5
UNIT
μA
μA
V
MHz
pF
-
1.0
10
dB
2005. 4. 21
Revision No : 0
1/3
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