KTC4075_ 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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KTC4075_ Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
KTC4075 TRANSISTOR (NPN)
FEATURES
z Excellent hFE linearity
z High hFE
z Low Noise
z Complementary to KTA2014
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction and Storage Temperature
Value
60
50
5
150
100
-55-125
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC = 100µA, IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1mA, IB=0
50
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE= 6V, IC=2mA
70
Collector-emitter saturation voltage
VCEsat
IC=100mA, IB= 10mA
Transition frequency
fT
VCE=10V, IC= 1mA
80
Collector output capacitance
Noise figure
Cob
VCE=10V, IE=0, f=1MHz
NF
VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ
Units
V
V
V
mA
mW
℃
MAX
0.1
0.1
700
0.25
3.5
10
UNIT
V
V
V
µA
µA
V
MHz
dB
dB
CLASSIFICATION OF hFE
Rank
O
Range
70~140
Marking
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL
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