L6225 查看數據表（PDF） - STMicroelectronics

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L6225

DMOS DUAL FULL BRIDGE DRIVER

STMicroelectronics 

ELECTRICAL CHARACTERISTICS

(Tamb = 25 °C, Vs = 48V, unless otherwise specified)

Symbol

Parameter

Test Conditions

VSth(ON) Turn-on Threshold

VSth(OFF) Turn-off Threshold

IS Quiescent Supply Current

All Bridges OFF;

Tj = -25°C to 125°C (7)

Tj(OFF) Thermal Shutdown Temperature

Output DMOS Transistors

RDS(ON) High-Side + Low-Side Switch ON Tj = 25 °C

Resistance

Tj =125 °C (7)

IDSS Leakage Current

EN = Low; OUT = VS

EN = Low; OUT = GND

Source Drain Diodes

VSD Forward ON Voltage

ISD = 1.4A, EN = LOW

trr Reverse Recovery Time

If = 1.4A

tfr Forward Recovery Time

Logic Input

VIL Low level logic input voltage

VIH High level logic input voltage

IIL Low Level Logic Input Current GND Logic Input Voltage

IIH High Level Logic Input Current 7V Logic Input Voltage

Vth(ON) Turn-on Input Threshold

Vth(OFF) Turn-off Input Threshold

Vth(HYS) Input Threshold Hysteresis

Switching Characteristics

tD(on)EN Enable to out turn ON delay time (8) ILOAD =1.4A, Resistive Load

tD(on)IN Input to out turn ON delay time ILOAD =1.4A, Resistive Load

(dead time included)

tRISE Output rise time(8)

ILOAD =1.4A, Resistive Load

tD(off)EN Enable to out turn OFF delay time (8) ILOAD =1.4A, Resistive Load

tD(off)IN Input to out turn OFF delay time ILOAD =1.4A, Resistive Load

tFALL Output Fall Time (8)

ILOAD =1.4A, Resistive Load

L6225

Min Typ Max Unit

5.8

6.3

6.8

V

5

5.5

6

V

5

10

mA

165

°C

1.47 1.69

Ω

2.35 2.70

Ω

2

mA

-0.3

mA

1.15 1.3

V

300

ns

200

ns

-0.3

0.8

V

2

7

V

-10

µA

10

µA

1.8

2.0

V

0.8

1.3

V

0.25 0.5

V

500

800

ns

1.9

µs

40

250

ns

500 800 1000 ns

500 800 1000 ns

40

250

ns

5/20

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