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L6229Q 查看數據表(PDF) - STMicroelectronics

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L6229Q Datasheet PDF : 28 Pages
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L6229Q
Electrical characteristics
Table 6.
Symbol
Electrical characteristics (continued)
(VS = 48 V, TA = 25 °C, unless otherwise specified)
Parameter
Test condition
fCP
Charge pump frequency
TJ = -25 °C to 125 °C (1)
PWM comparator and monostable
Min Typ Max Unit
0.6 1 MHz
IRCOFF
VOFFSET
tprop
tblank
Source current at pin RCOFF
Offset voltage on sense comparator (3)
Turn OFF propagation delay (4)
Internal blanking time on sense
comparator
VRCOFF = 2.5 V
Vref = 0.5 V
Vref = 0.5 V
tON(min) Minimum on time
tOFF PWM recirculation time
IBIAS Input bias current at pin VREF
ROFF = 20 kΩ; COFF = 1 nF
ROFF = 100 kΩ; COFF = 1 nF
Tacho monostable
3.5 5.5
mA
±5
mV
500
ns
1
µs
2.5 3 µs
13
μs
61
μs
10 µA
IRCPULSE Source current at pin RCPULSE
tPULSE Monostable of time
RTACHO Open drain ON resistance
VRCPULSE = 2.5 V
RPUL = 20 kΩ; CPUL = 1 nF
RPUL = 100 kΩ; CPUL = 1 nF
3.5 5.5
mA
12
μs
60
μs
40 60 W
Over current detection and protection
ISOVER Supply overcurrent protection threshold TJ = -25 to 125 °C (2)
2 2.8 3.55 A
ROPDR Open drain ON resistance
IDIAG = 4 mA
40 60 W
IOH
OCD high level leakage current
VDIAG = 5 V
1
µA
tOCD(ON) OCD turn-ON delay time (4)
IDIAG = 4 mA; CDIAG < 100 pF
200
ns
tOCD(OFF) OCD turn-OFF delay time (4)
IDIAG = 4 mA; CDIAG < 100 pF
100
ns
1. Tested at 25 °C in a restricted range and guaranteed by characterization
2. See Figure 3.
3. Measured applying a voltage of 1 V to pin SENSE and a voltage drop from 2 V to 0 V to pin VREF.
4. See Figure 4.
Doc ID 15209 Rev 3
9/28

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